Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

FEATURES ? Trench MOS Schottky technology generation 2 ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified a

文件：126.55 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology generation 2

文件：105.26 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

FEATURES ? Trench MOS Schottky technology generation 2 ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified a

文件：126.55 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：94.63 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

分立 Trench MOS Schottky technology generation 2\nVery low profile - typical height of 1.7 mm\nIdeal for automated placement;

Vishay

威世

Package：TO-263-3，D2Pak（2 引線 + 凸片）變型；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY GP

Vishay General Semiconductor - Diodes Division

Package：TO-263-3，D2Pak（2 引線 + 凸片）變型；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 200V 10A SMPD

Vishay General Semiconductor - Diodes Division

Package：TO-263-3，D2Pak（2 引線 + 凸片）變型；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY SCHOTTKY 200V SMPD

Vishay General Semiconductor - Diodes Division