| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) ? Compo 文件：166.33 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：149.51 Kbytes 頁(yè)數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：149.51 Kbytes 頁(yè)數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High efficiency operation FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) ? Compo 文件：167.09 Kbytes 頁(yè)數(shù)：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) ? Compo 文件：166.33 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) ? Compo 文件：166.33 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in 文件：161.45 Kbytes 頁(yè)數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR- 文件：124.54 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in 文件：161.45 Kbytes 頁(yè)數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
THINKI 10 Ampere,200 Volt Traditional Planar Process Schottky Barrier Rectifier Features Low forward voltage drop ThinkiSemi traditional planar schottky High current capability High surge current capability Low reverse leakage current Application Inverter/Amplifier Photovoltaic Solar Cell Protection/SMPS Battery Reverse Protection Circuit/Charger 文件：1.77269 Mbytes 頁(yè)數(shù)：3 Pages | THINKISEMI 思祁半導(dǎo)體 | THINKISEMI |
詳細(xì)參數(shù)
- 型號(hào)：
V10
- 制造商：
VISHAY
- 制造商全稱：
Vishay Siliconix
- 功能描述：
DZ23-V
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY |
23+ |
NA |
8486 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
VISHAY/威世 |
23+ |
SOT23 |
83500 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
VISHAY |
23+ |
SOT-23 |
34142 |
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
VISHAY/威世 |
25+ |
SOT-23 |
120 |
原裝正品,假一罰十! |
詢價(jià) | ||
VISHAY/威世 |
25+ |
SOT-23 |
120 |
原裝正品,假一罰十! |
詢價(jià) | ||
VISHAY |
24+ |
SOT-23 |
80000 |
只做自己庫(kù)存 全新原裝進(jìn)口正品假一賠百 可開(kāi)13%增 |
詢價(jià) | ||
PANJIT/強(qiáng)茂 |
23+ |
SOT-23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
PANJIT/強(qiáng)茂 |
24+ |
SOT-23 |
60000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
xx |
2023+環(huán)?，F(xiàn)貨 |
SOT-23 |
30000 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢價(jià) | ||
YANGJIE |
24+ |
SOT-23 |
50000 |
原廠直銷全新原裝正品現(xiàn)貨 歡迎選購(gòu) |
詢價(jià) |
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