絲?。?a target="_blank" title="Marking" href="/c2k/marking.html">C2K；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Excellent RF performance : IIP3 = –7 dBm@fRFin = 1.9 GHz (reference) IM3 = –88 dBm@PRFin = –38 dBm, 1.9 GHz (reference) ? Similar conversion gain to mPC2757 and lower noise figure than mPC2758 ? Minimized carrier leakage : RFLO = –80 dB@fRFin = 900 MHz (reference) RFLO = –55 dB@fRF

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Supply voltage : VCC = 2.7 to 5.5 V ? Low current consumption : ICC = 4.1 mA TYP.@VCC = VPS = 3.0 V ? Wideband response : fRF = 100 to 500 MHz ? Power save function : ICCPS = 1 mA MAX. @VCC = 3.0 V, PS = 0 V ? High-density surface mounting : 20-pin plastic SSOP (6.7 ′ 4.4 ′ 1.5 mm)

文件：276.06 Kbytes 頁數(shù)：18 Pages

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Supply voltage : VCC = 2.7 to 5.5 V ? Low current consumption : ICC = 4.1 mA TYP.@VCC = VPS = 3.0 V ? Wideband response : fRF = 100 to 500 MHz ? Power save function : ICCPS = 1 mA MAX. @VCC = 3.0 V, PS = 0 V ? High-density surface mounting : 20-pin plastic SSOP (6.7 ′ 4.4 ′ 1.5 mm)

文件：276.06 Kbytes 頁數(shù)：18 Pages

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BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES ? Recommended operating frequency : f = 100 MHz to 1.92 GHz ? Supply voltage : VCC = 2.7 to 3.3 V ? Low current consumption : ICC = 11 mA TYP. @ VCC = 3.0 V ? Gain control voltage : VAGC = 0.6 to 2.4 V (recommended) ? Two types of gain control : μPC8119T ; VAGC up vs. Gain down (Forw

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VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The μPC8119T and μPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

文件：550.61 Kbytes 頁數(shù)：52 Pages

NEC

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-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The μPC8130TA and μPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional μPC8119T

文件：371.8 Kbytes 頁數(shù)：40 Pages

NEC

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絲?。?a target="_blank" title="Marking" href="/c2m/marking.html">C2M；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES ? Recommended operating frequency : f = 100 MHz to 1.92 GHz ? Supply voltage : VCC = 2.7 to 3.3 V ? Low current consumption : ICC = 11 mA TYP. @ VCC = 3.0 V ? Gain control voltage : VAGC = 0.6 to 2.4 V (recommended) ? Two types of gain control : μPC8119T ; VAGC up vs. Gain down (Forw

文件：663.95 Kbytes 頁數(shù)：52 Pages

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VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The μPC8119T and μPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

文件：550.61 Kbytes 頁數(shù)：52 Pages

NEC

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J-FET INPUT LOW-OFFSET OPERATIONAL AMPLIFIER

DESCRIPTION The μPC811 operational amplifier offers high input impedance, low offset voltage, high slew rate, and stable AC operating characteristics. NEC's unique high-speed PNP transistor (fr-300 MHz) in the output stage solves the oscillation problem of current sink- ing with a large capa

文件：391.72 Kbytes 頁數(shù)：10 Pages

NEC

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High Stability, Low Offset Voltage J-FET Input Operational Amplifier

FEATURES ? Input Offset Voltage ±1 mV (TYP.) (±2.5 mV MAX.) ? VIO Temperature Drift ±7 μV/?C (TYP.) ? Input Bias Current 50 pA (TYP.) ? Slew Rate 15 V/μs (TYP.) ? Unity Gain Frequency 4 MHz (TYP.) ? Input Equivalent Noise Voltage Density 19 nV/ Hz (TYP.) (f = 1 kHz) ? Stable operation again

文件：742.66 Kbytes 頁數(shù)：8 Pages

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