VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The μPC8119T and μPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

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NEC

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-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The μPC8130TA and μPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional μPC8119T

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NEC

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絲?。?a target="_blank" title="Marking" href="/c2r/marking.html">C2R；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES ? Recommended operating frequency: f = 800 MHz to 1.5 GHz ? Low distortion : Padj ￡ –60 dBc MAX. @Pin = –15 dBm, Df = ±50 kHz, VCC = 3.0 V, TA = +25 °C ? Supply voltage : VCC = 2.7 to 3.3 V ? Low current consumption : ICC = 11 mA TYP. @VCC = 3.0 V ? Gain control voltage : VAGC = 0 t

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RENESAS

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LINER INTERFRATED CIRCUIT

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UTC

友順

2.488 Gbit/sec 32:1 SONET/SDH Mux with Clock Generator

General Description The VSC8131 multiplexes 32 TTL compatible 77.76Mb/s Parallel Data Inputs (D0-D31) into a single LVPECL 2.488 Gb/s serial output (DO+) for use in SONET STS-48/SDH STM-16 systems. An integrated Clock Multiplier Unit (CMU) generates a LVPECL 2.488 GHz clock signal (CO+) from an e

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VITESSE