UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 - 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save func

文件：214.57 Kbytes 頁數(shù)：5 Pages

NEC

瑞薩

UP CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The μPC8129GR is a silicon monolithic integrated circuit designed as indirect quadrature modulator for digital mobile communication systems. This modulator consists of 0.8 GHz to 1.9 GHz up-converter and 100 MHz to 400 MHz quadrature modulator which are packaged in 20 pin SSOP. The de

文件：587.72 Kbytes 頁數(shù)：3 Pages

NEC

瑞薩

DUAL J-FET INPUT LOW-OFFSET OPRERATIONAL AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：401.72 Kbytes 頁數(shù)：10 Pages

NEC

瑞薩

DUAL J-FET INPUT LOW-OFFSET OPRERATIONAL AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：401.72 Kbytes 頁數(shù)：10 Pages

NEC

瑞薩

High Stability, Low Offset Voltage J-FET Input Dual Operational Amplifier

FEATURES ? Input Offset Voltage ±1 mV (TYP.) (±3 mV MAX.) ? VIO Temperature Drift ±7 μV/?C (TYP.) ? Input Bias Current 50 pA (TYP.) ? Slew Rate 15 V/μs (TYP.) ? Unity Gain Frequency 4 MHz (TYP.) ? Input Equivalent Noise Voltage Density 19 nV/ Hz (TYP.) (f = 1 kHz) ? Stable operation against

文件：735.05 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

High Slew Rate, Low Offset Voltage J-FET Input Operational Amplifier

FEATURES ? Input Offset Voltage ±1 mV (TYP.) (±2.5 mV MAX.) ? VIO Temperature Drift ±7 μV/?C (TYP.) ? Input Bias Current 50 pA (TYP.) ? Slew Rate 25 V/μs (TYP.) ? Unity Gain Frequency 6 MHz (TYP.) ? Input Equivalent Noise Voltage Density 19 nV/ Hz (TYP.) (f = 1 kHz) ? Stable operation again

文件：690.3 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES ? Recommended operating frequency: f = 800 MHz to 1.5 GHz ? Low distortion : Padj ￡ –60 dBc MAX. @Pin = –15 dBm, Df = ±50 kHz, VCC = 3.0 V, TA = +25 °C ? Supply voltage : VCC = 2.7 to 3.3 V ? Low current consumption : ICC = 11 mA TYP. @VCC = 3.0 V ? Gain control voltage : VAGC = 0 t

文件：453.59 Kbytes 頁數(shù)：42 Pages

RENESAS

瑞薩

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The μPC8119T and μPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

文件：550.61 Kbytes 頁數(shù)：52 Pages

NEC

瑞薩

絲印：C2Q；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES ? Recommended operating frequency: f = 800 MHz to 1.5 GHz ? Low distortion : Padj ￡ –60 dBc MAX. @Pin = –15 dBm, Df = ±50 kHz, VCC = 3.0 V, TA = +25 °C ? Supply voltage : VCC = 2.7 to 3.3 V ? Low current consumption : ICC = 11 mA TYP. @VCC = 3.0 V ? Gain control voltage : VAGC = 0 t

文件：453.59 Kbytes 頁數(shù)：42 Pages

RENESAS

瑞薩

-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The μPC8130TA and μPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional μPC8119T

文件：371.8 Kbytes 頁數(shù)：40 Pages

NEC

瑞薩