SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The μPC8106TB and μPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage. The μPC8106TB features improved intermodulation and μPC8109TB features low current consumption. From these two version, you can c

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NEC

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SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The μPC8106TB and μPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage. The μPC8106TB features improved intermodulation and μPC8109TB features low current consumption. From these two version, you can c

文件：185.13 Kbytes 頁數(shù)：24 Pages

NEC

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絲?。?a target="_blank" title="Marking" href="/c2g/marking.html">C2G；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES ? Recommended operating frequency : fRFout = 0.4 to 2.0 GHz, fIFin = 100 to 400 MHz ? Supply voltage : VCC = 2.7 to 5.5 V ? High-density surface mounting : 6-pin super minimold package ? Low current consumption : ICC = 9 mA TYP. @ mPC8106TB ICC = 5 mA TYP. @ mPC8109TB ? Minimized ca

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3 V, SILICON MMIC FREQUENCY UP-CONVERTER

DESCRIPTION The UPC8106T and UPC8109T are L-Band Frequency UpConverters manufactured using the NESAT III MMIC process. The UPC8106T was designed for low distortion while the UPC8109T was designed for low current consumption. Operation from a 3 volt supply voltage makes this device ideal for handh

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NEC

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High Stability, Low Offset Voltage J-FET Input Operational Amplifier

FEATURES ? Input Offset Voltage ±1 mV (TYP.) (±2.5 mV MAX.) ? VIO Temperature Drift ±7 μV/?C (TYP.) ? Input Bias Current 50 pA (TYP.) ? Slew Rate 15 V/μs (TYP.) ? Unity Gain Frequency 4 MHz (TYP.) ? Input Equivalent Noise Voltage Density 19 nV/ Hz (TYP.) (f = 1 kHz) ? Stable operation again

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J-FET INPUT LOW-OFFSET OPERATIONAL AMPLIFIER

DESCRIPTION The μPC811 operational amplifier offers high input impedance, low offset voltage, high slew rate, and stable AC operating characteristics. NEC's unique high-speed PNP transistor (fr-300 MHz) in the output stage solves the oscillation problem of current sink- ing with a large capa

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1 GHz QUADRATURE MODULATOR

DESCRIPTION The μPC8110GR is a sillicon monolithic integrated circuit designed as 1 GHz direct quadrature modulator for digital mobile communication systems. This modulator housed in a 20 pin plastic SSOP that easy to install and contributes to miniaturizing the system. The device has power save

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NEC

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1 GHz DIRECT QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION

DESCRIPTION The μPC8110GR is a sillicon monolithic integrated circuit designed as 1 GHz direct quadrature modulator for digital mobile communication systems. This modulator housed in a 20 pin plastic SSOP that easy to install and contributes to miniaturizing the system. The device has power save

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Single Chip Transceiver Silicon MMIC for PHS

DESCRIPTION The μPC8139GR-7JH is a silicon microwave monolithic IC (SiMMIC) developed as a transceiver for Personal Handyphone System (PHS). This IC is a highly integrated single chip, suitable for PHS, including a quadrature modulator, up converter, and AGC circuit for adjusting the output leve

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900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The μPC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This IC integrates a pre-mixer for local signals plus a quadrature modulator operating from 889 MHz to 960 MHz. The chip which has been conventionally pac

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NEC

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