P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The μPA610TA is a switching device which can be driven directly by a 2.5 V power source. The μPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES ? Can be driven by a 2.5 V power source.

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NEC

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MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The mPA610TA is a switching device which can be driven directly by a 2.5 V power source. The mPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circ

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RENESAS

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Dual P-Channel 20 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Load Switch for Portable Applications ? Battery Switch for Portable Devices ? Computers - Bus Switch - Load Switch

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VBSEMI

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION\nThe μPA610TA is a switching device which can be driven directly by a 2.5 V power source.\nThe μPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.FEATURES\n? Can be driven by a 2.5 V power source.\n? Low Gate Cut ? Can be driven by a 2.5 V power source.\n? Low Gate Cut-off Voltage.?;

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