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                >UPA802T>規(guī)格書(shū)列表
                
          
            
          
                
          
                    
          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          UPA802T
          HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
          
The μPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.
FEATURES
? Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
? High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
? A Mini Mold Package Adopted

          文件：53.04 Kbytes 頁(yè)數(shù)：6 Pages
          NEC
          瑞薩
          

          UPA802T
          HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
          
The μPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.
FEATURES
? Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
? High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
? A Mini Mold Package Adopted

          文件：216.28 Kbytes 頁(yè)數(shù)：8 Pages
          RENESAS
          瑞薩
          

          UPA802T
          NPN SILICON HIGH FREQUENCY TRANSISTOR
          文件：606.19 Kbytes 頁(yè)數(shù)：9 Pages
          CEL
          

          UPA802T
          NPN SILICON HIGH FREQUENCY TRANSISTOR
          文件：236.48 Kbytes 頁(yè)數(shù)：10 Pages
          CEL
          

          UPA802T-T1
          HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
          
The μPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.
FEATURES
? Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
? High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
? A Mini Mold Package Adopted

          文件：53.04 Kbytes 頁(yè)數(shù)：6 Pages
          NEC
          瑞薩
          

          UPA802T-T1
          HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
          
The μPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.
FEATURES
? Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
? High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
? A Mini Mold Package Adopted

          文件：216.28 Kbytes 頁(yè)數(shù)：8 Pages
          RENESAS
          瑞薩
          

          UPA802T_09
          NPN SILICON HIGH FREQUENCY TRANSISTOR
          文件：606.19 Kbytes 頁(yè)數(shù)：9 Pages
          CEL
          

          UPA802T_98
          NPN SILICON HIGH FREQUENCY TRANSISTOR
          文件：236.48 Kbytes 頁(yè)數(shù)：10 Pages
          CEL
          

          UPA802T_V1
          NPN SILICON HIGH FREQUENCY TRANSISTOR
          文件：606.19 Kbytes 頁(yè)數(shù)：9 Pages
          CEL
          

          UPA802T-T1-A
          NPN SILICON HIGH FREQUENCY TRANSISTOR
          文件：606.19 Kbytes 頁(yè)數(shù)：9 Pages
          CEL
          

          
            
          
		
        
          
            
          
                
          詳細(xì)參數(shù)
          
            
          
            
            
            	
          • 型號(hào)：
            UPA802T
          • 制造商：
            NEC 
          • 制造商全稱(chēng)：
            NEC 
          • 功能描述：
            HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD 
          
            
          
        
          
            
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          NEC
          		

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            更新時(shí)間2026-1-18 15:14:00
        
          
        
          
          
          
            
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