P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The μPA653TT is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 4.0 V dr

文件：70.41 Kbytes 頁數(shù)：8 Pages

NEC

瑞薩

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA653TT is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 4.0 V

文件：297.32 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

P-Channel 20 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Load Switch for Portable Devices - Cellular Phone - DSC - Portable Game Console - MP3 - GPS

文件：1.05873 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Renesas

瑞薩