N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The μPA620TT is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 2.5 V dri

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NEC

瑞薩

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING FEATURES ? 2.5 V drive available ? Low on-state resistance RDS(on)1 = 38 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.0 V, ID = 2.5 A) RDS(on)3 = 54 mΩ MAX. (VGS = 2.5 V, ID = 2.5 A)

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RENESAS

瑞薩

6A, 200V Ultrafast Dual Diodes

The RURD620CC and RURD620CCS are ultrafast dual diodes with soft recovery characteristics (trr Features ? Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . . . .

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FAIRCHILD

仙童半導體

POWER SCHOTTKY RECTIFIERS

文件：90.79 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

21.5' Retail Touch UTC-620E with Intel Haswell i5-4300U

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ADVANTECH

研華科技