N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The μ PA1970 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 2.5 V driv

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NEC

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1970 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 2.5 V d

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RENESAS

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Dual N-Channel 20 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC

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VBSEMI

微碧半導(dǎo)體

Nch Dual Power Mosfet 20V 2.2A 69Mohm 6Pin Tmm/Sc-95

The UPA1970TE is a Nch Dual Power Mosfet 20V 2.2A 69Mohm 6Pin Tmm/Sc-95. ? 2.5 V drive available\n? Low on-state resistance RDS(on)1 = 69 m? MAX. (VGS = 4.5 V, ID = 1.0 A) RDS(on)2 = 72 m? MAX. (VGS = 4.0 V, ID = 1.0 A) RDS(on)3 = 107 m? MAX. (VGS = 2.5 V, ID = 1.0 A)\n文檔文檔標(biāo)題類型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語應(yīng)用文檔 2021年4月16日UPA1970 Data Sheet (G15;

Renesas

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