P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The μ PA1952 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 1.8 V dri

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NEC

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1952 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 1.8 V

文件：206.73 Kbytes 頁數(shù)：10 Pages

RENESAS

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Dual P-Channel 20 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Load Switch for Portable Applications ? Battery Switch for Portable Devices ? Com - Bus Switch - Load Switchputers

文件：525.68 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Power MOSFETs

Renesas

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