P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The μPA1913 is a switching device which can be driven directly by a 2.5-V power source. The μPA1913 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? Can be dri

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NEC

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Old Company Name in Catalogs and Other Documents

DESCRIPTION The μPA1913 is a switching device which can be driven directly by a 2.5-V power source. The μPA1913 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? Can be dri

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P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Available ? TrenchFET? Power MOSFET APPLICATIONS ? Load Switch

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VBSEMI

微碧半導(dǎo)體

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The μPA1913 is a switching device which can be driven directly by a 2.5-V power source. The μPA1913 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? Can be dri

文件：71.85 Kbytes 頁數(shù)：8 Pages

NEC

瑞薩

Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe μPA1913 is a switching device which can be driven directly by a 2. 5-V power source. The μPA1913 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power ? Can be driven by a 2.5-V power source\n? Low on-state resistance RDS(on)1 = 55 m? MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 58 m? MAX. (VGS = –4.0 V, ID = –2.5 A) RDS(on)3 = 82 m? MAX. (VGS = –2.7 V, ID = –2.5A) RDS(on)4 = 90 m? MAX. (VGS = –2.5 V, ID = –2.5A);

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