TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)

Notebook PC Applications Portable Equipment Applications ? Small footprint due to small and thin package ? Low drain-source ON-resistance: RDS (ON) = 24 mΩ (typ.) ? High forward transfer admittance: |Yfs| = 14 S (typ.) ? Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) ? Enhancement mo

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TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

東芝

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)

Toshiba

東芝

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs ● Small footprint due to small and thin package ● Low drain-source ON resistance: RDS (ON) = 15 m? (typ.) ● High forward transfer admittance: |Yfs| = 12 S (typ.) ● Low leakage current: IDSS = ?10 μA (max) (VDS = ?3

文件：323.41 Kbytes 頁數(shù)：7 Pages

TOSHIBA

東芝

KNOCK SENSOR INTERFACE

文件：324.74 Kbytes 頁數(shù)：20 Pages

TI

德州儀器

KNOCK SENSOR INTERFACE

文件：242.27 Kbytes 頁數(shù)：18 Pages

TI

德州儀器