Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數：73 Pages

TOSHIBA

東芝

TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS)

Portable Equipment Applications Motor Drive Applications ? Low drain-source ON-resistance : P Channel RDS (ON) = 38 m?(typ.) (VGS=?10V) N Channel RDS (ON) = 38 m?(typ.)（VGS=10V) ? High forward transfer admittance : P Channel |Yfs| = 7.3

文件：293.12 Kbytes 頁數：11 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/8404/marking.html">8404；Package：2-3V1G；Silicon P,N Channel MOSFET

■ Features ● Low drain-source ON-resistance: P Channel RDS(ON) = 38m? (typ.)(VGS=-10V) N Channel RDS(ON) = 38m?(typ.)(VGS=10V) ● High forward transfer admittance: P Channel |Yfs| = 7.3S (typ.) N Channel |Yfs| = 8S (typ.) ● Low leakage current: P Channel IDSS = -10?A(max)(VDS

文件：258.73 Kbytes 頁數：10 Pages

KEXIN

科信電子

Power MOSFET (N-ch + P-ch complementary

Application Scope：Mobile equipments / Motor drivers\nPolarity：N-ch + P-ch\nGeneration：U-MOSⅣ/U-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：馬來西亞 Drain current (Q1) ID 4 A \nDrain-Source voltage (Q1) VDSS 30 V \nGate-Source voltage (Q1) VGSS +/-20 V \nDrain current (Q2) ID -4 A \nDrain-Source voltage (Q2) VDSS -30 V \nGate-Source voltage (Q2) VGSS +/-20 V \nPower Dissipation PD 1.48 W ;

Toshiba

東芝