TOSHIBA Transistor Silicon NPN Epitaxial Type

Portable Equipment Applications Switching Applications Inverter Lighting Applications ? Small footprint due to small and thin package ? High DC current gain : hFE = 400 to 1000 (IC = 0.3 A) ? Low collector-emitter saturation : VCE (sat) = 0.14 V (max) ? High-speed switching : t

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TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/8701/marking.html">8701；Package：PS-16；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

東芝

Power transistor for high-speed switching applications (2 in 1)

Feature：High-speed switching\nApplication Scope：Inverter lighting applications\nPolarity：NPN + NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 馬來(lái)西亞 Collector Current (Q1) IC 2 A \nCollector Current (Q2) IC 2 A \nCollector Current (Q1) ICP 3 A \nCollector Current (Q2) ICP 3 A \nCollector power dissipation (Q1/Q2) (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 0.9 W \nCollector-emitter voltage (Q1) VCEO 50 V \nCollector-emitter;

Toshiba

東芝

Package：8-SMD，扁平引線；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 陣列 描述：X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage