Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)

Notebook PC Applications Portable Equipment Applications ? Small footprint due to small and thin package ? Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.) ? High forward transfer admittance:|Yfs| = 36 S (typ.) ? Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) ? Enhancement mode

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TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

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Notebook PC Applications Portable Equipment Applications

文件：221.87 Kbytes 頁數(shù)：7 Pages

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Power MOSFET (N-ch single VDSS 30V)

Application Scope：Notebook PCs\nPolarity：N-ch\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 馬來西亞 Drain current ID 9.1 A \nPower Dissipation PD 1.68 W \nDrain-Source voltage VDSS 20 V ;

Toshiba

東芝

Notebook PC Applications Portable Equipment Applications

文件：221.87 Kbytes 頁數(shù)：7 Pages

TOSHIBA

東芝