P-Channel 20-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Load Switch ? PA Switch ? DC/DC Converters

文件：482.57 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

P -Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：720.21 Kbytes 頁數(shù)：7 Pages

SAMHOP

三合微科

P-Channel 20-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Load Switch ? PA Switch ? DC/DC Converters

文件：471.62 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：603.84 Kbytes 頁數(shù)：7 Pages

SAMHOP

三合微科

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：623.5 Kbytes 頁數(shù)：7 Pages

SAMHOP

三合微科

P-Channel 30 V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg Tested APPLICATIONS ? For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：500.49 Kbytes 頁數(shù)：9 Pages

VBSEMI

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絲?。?a target="_blank" title="Marking" href="/25g3l/marking.html">25G3L；Package：SO-8；N-channel 30 V, 0.0025 Ω, 22 A, SO-8 STripFET? VI DeepGATE? Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Application ■ Switching applications Description This product utilizes the 6th generation of design rules of ST’

文件：257.26 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

意法半導體

N-CHANNEL 30V - 0.0032 ohm - 25A SO-8 STripFET??III MOSFET FOR DC-DC CONVERSION

Description This device utilizes the advanced design rules of STs proprietary STripFET? technology. The innovative process coupled with unique metallization techniques makes it possible to produce the most advanced low voltage Power MOSFET in an SO-8 package. The device is therefore suitable for

文件：290.34 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導體

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-26 package.

文件：163.39 Kbytes 頁數(shù)：7 Pages

SAMHOP

三合微科

P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Available ? TrenchFET? Power MOSFET APPLICATIONS ? Load Switch

文件：456.71 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體