N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：153.48 Kbytes 頁(yè)數(shù)：7 Pages

SAMHOP

三合微科

N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? DC/DC Converter

文件：481.31 Kbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Mosfets

Samhop

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：124.74 Kbytes 頁(yè)數(shù)：7 Pages

SAMHOP

三合微科

TCAN341x 3.3-V CAN FD Transceivers With Standby Mode and ±58 V Bus Standoff

1 Features ? 3.3 V Single supply operation – Eliminates the 5 V regulator saving BOM cost and reducing PCB space ? Excellent EMC operation in homogeneous and heterogeneous networks ? Compatible with the requirements of ISO 11898-2:2016 physical layer standard ? Support of classical CAN and

文件：1.84294 Mbytes 頁(yè)數(shù)：42 Pages

TI

德州儀器

TCAN341x 3.3-V CAN FD Transceivers with Standby Mode

1 Features ? 3.3 V Single supply operation – Eliminates the 5 V regulator saving BOM cost and reducing PCB space ? Compatible with the requirements of ISO 11898-2:2016 physical layer standard ? Support of classical CAN and optimized CAN FD performance at 2, 5, and 8 Mbps – Short and symmet

文件：1.81864 Mbytes 頁(yè)數(shù)：42 Pages

TI

德州儀器