N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

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STMICROELECTRONICS

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Dual N-Channel 60 V (D-S) 175 ?C MOSFET

FEATURES ? TrenchFET? power MOSFET ? 100 Rg and UIS tested

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VBSEMI

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N溝道60V - 0.045 Ohm - 4A - SO-8 STripFET(TM) II功率MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based pocess. The resulting transistor shows extremely high packing density fow low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufactur ? Standard outline for easy automated surface mount assembly \n? Low threshold drive;

ST

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N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：71.01 Kbytes 頁數(shù)：5 Pages

STMICROELECTRONICS

意法半導體