Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-26 package.

文件：799.26 Kbytes 頁(yè)數(shù)：8 Pages

SAMHOP

三合微科

Dual N-Channel 20 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC

文件：521.62 Kbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Dual N-Channel Enhancement Mode Field Effect Transistor

Samhop

三合微科

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF3622 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =30V,ID =25A RDS(ON) =

文件：1.6872 Mbytes 頁(yè)數(shù)：6 Pages

TUOFENG

拓鋒半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

General Description The TF3622DS is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . The TF3622DS meet the RoHS and Green Product requirement,100 EAS guarante

文件：3.37271 Mbytes 頁(yè)數(shù)：6 Pages

TUOFENG

拓鋒半導(dǎo)體

Bi-Spectrum AI Thermal Camera

? Bi-spectrum monitoring with 2MP visible & QVGA thermal ? AI based Object classification with visible channel only (person) ? Remote Temperature Monitoring within -20 ~ 130°C range ? 6 of quadrangle ROI areas for temperature monitoring ? Compact and Light-weight for Indoor purpose

文件：1.12431 Mbytes 頁(yè)數(shù)：5 Pages

HANWHAVISION

韓華