650 V, 16 A high surge silicon carbide power Schottky diode

Features ? No reverse recovery charge in application current range ? Switching behavior independent of temperature ? High forward surge capability ? Operating Tj from -55 °C to 175 °C ? ECOPACK2 compliant component

文件：552.84 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

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650 V, 12A High surge Silicon Carbide power Schottky diode

The SiC diode STPSC16G065, available in TO-220AC, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no re ? No reverse recovery charge in application current range \n? High forward surge capability \n? ECOPACK2 compliant component;

ST

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絲?。?a target="_blank" title="Marking" href="/psc16g065d/marking.html">PSC16G065D；Package：TO-220AC；650 V, 16 A high surge silicon carbide power Schottky diode

Features ? No reverse recovery charge in application current range ? Switching behavior independent of temperature ? High forward surge capability ? Operating Tj from -55 °C to 175 °C ? ECOPACK2 compliant component

文件：552.84 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導體

TO-247

ST

上傳：深圳深宇韜電子科技有限公司

原廠封裝

ST

上傳：深圳市力拓輝電子有限公司