首頁 >STPSC20065>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
STPSC20065 | 650 V power Schottky silicon carbide diode Features ? No reverse recovery charge in application current range ? Switching behavior independent of temperature ? Dedicated to PFC applications ? Insulated package TO-220AC ins: ? Insulated voltage: 2500 V rms ? Typical package capacitance: 7 pF ? High forward surge capability ? ECOPACK 文件：631.92 Kbytes 頁數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
STPSC20065 | 650 V 碳化硅功率肖特基二極管 碳化硅（SiC）二極管是一款超高性能的功率肖特基二極管，是使用碳化硅基板制造的。寬帶隙材料可用于設(shè)計650V額定電壓的肖特基二極管。由于肖特基結(jié)構(gòu)的關(guān)系，關(guān)斷時不存在反向恢復(fù)現(xiàn)象，且振鈴模式幾乎可忽略。最小的容性關(guān)斷行為受溫度影響小。\n\n ST碳化硅（SiC）二極管特別適用于PFC應(yīng)用，可在硬開關(guān)條件下大幅提升效能。其高耐正向浪涌電流能力可確保在瞬態(tài)期間提供良好的耐受性。 ? 在應(yīng)用電流范圍內(nèi)無反向恢復(fù) \n? 開關(guān)行為受溫度影響小 \n? 專為PFC應(yīng)用設(shè)計 \n? 絕緣封裝TO-220AC插件： \n ?Insulated voltage: 2500 V rms \n ?Typical package capacitance: 7 pF \n? 高耐正向浪涌電流能力 \n? ECOPACK?2 兼容組件 \n? 最高工作溫度：Tj 175 °C; | ST 意法半導(dǎo)體 | ST | |
650 V, dual 10 A, power Schottky silicon carbide diode Features ? No or negligible reverse recovery ? Switching behavior independent of temperature ? Low Forward voltage drop ? Operating Tj from -40 °C to +175 °C ? ECOPACK2 compliant component ? Power efficient product Description The STPSC20065C is an ultra-high performance power Schottky d 文件：227.93 Kbytes 頁數(shù)：10 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
650 V power Schottky silicon carbide diode Features ? No reverse recovery charge in application current range ? Switching behavior independent of temperature ? Dedicated to PFC applications ? Insulated package TO-220AC ins: ? Insulated voltage: 2500 V rms ? Typical package capacitance: 7 pF ? High forward surge capability ? ECOPACK 文件：631.92 Kbytes 頁數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
650 V power Schottky silicon carbide diode Features ? No reverse recovery charge in application current range ? Switching behavior independent of temperature ? Dedicated to PFC applications ? Insulated package TO-220AC ins: ? Insulated voltage: 2500 V rms ? Typical package capacitance: 7 pF ? High forward surge capability ? ECOPACK 文件：631.92 Kbytes 頁數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Automotive 650 V power Schottky silicon carbide diode Features ? AEC-Q101 qualified ? No reverse recovery charge in application current range ? Switching behavior independent of temperature ? Dedicated to PFC applications ? High forward surge capability ? ECOPACK?2 compliant component ? PPAP capable ? Operating Tj from -40 °C to 175 °C 文件：617.88 Kbytes 頁數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Automotive 650 V power Schottky silicon carbide diode Features ? AEC-Q101 qualified ? No reverse recovery charge in application current range ? Switching behavior independent of temperature ? Dedicated to PFC applications ? High forward surge capability ? ECOPACK?2 compliant component ? PPAP capable ? Operating Tj from -40 °C to 175 °C 文件：617.88 Kbytes 頁數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
650 V power Schottky silicon carbide diode Features ? No reverse recovery charge in application current range ? Switching behavior independent of temperature ? Dedicated to PFC applications ? Insulated package TO-220AC ins: ? Insulated voltage: 2500 V rms ? Typical package capacitance: 7 pF ? High forward surge capability ? ECOPACK 文件：631.92 Kbytes 頁數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Automotive 650 V power Schottky silicon carbide diode Features ? AEC-Q101 qualified ? No reverse recovery charge in application current range ? Switching behavior independent of temperature ? Dedicated to PFC applications ? High forward surge capability ? ECOPACK?2 compliant component ? PPAP capable ? Operating Tj from -40 °C to 175 °C 文件：617.88 Kbytes 頁數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Automotive 650 V power Schottky silicon carbide diode Features ? AEC-Q101 qualified ? No reverse recovery charge in application current range ? Switching behavior independent of temperature ? Dedicated to PFC applications ? High forward surge capability ? ECOPACK?2 compliant component ? PPAP capable ? Operating Tj from -40 °C to 175 °C 文件：617.88 Kbytes 頁數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- Number of Diodes_spec：
1
- Marketing Status：
Active
- Repetitive Peak Reverse Voltage_max(V)：
650
- Average Rectified Current_max(A)：
20
- VF_max(V)：
1.45
- VF measure condition_spec(@ IF)(A)：
20
- Reverse Current_max(mA)：
0.3
- Total capacitive charge(nC)：
62
- Non-Repet Peak Forward Surge Current_max(A)：
90
- Junction Temperature_max(°C)：
175
- General Description：
650 V power Schottky silicon carbide diode
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
DO-247TO-220ACTO-220 |
16900 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ST |
25+ |
DO-247TO-220ACTO-220 |
16900 |
原裝，請咨詢 |
詢價 | ||
ST |
2511 |
DO-247TO-220ACTO-220 |
16900 |
電子元器件采購降本30%!原廠直采,砍掉中間差價 |
詢價 | ||
ST |
26+ |
DO-247TO-220ACTO-220 |
60000 |
只有原裝 可配單 |
詢價 | ||
STMicroelectronics |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
ST |
23+ |
NA |
19587 |
專業(yè)電子元器件供應(yīng)鏈正邁科技特價代理特價，原裝元器件供應(yīng)，支持開發(fā)樣品 |
詢價 | ||
ST |
19+ |
TO-220 |
32000 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
ST/意法 |
23+ |
NA |
12730 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
ST |
2447 |
NA |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
ST/意法 |
21+ |
TO-220 |
8000 |
優(yōu)勢供應(yīng) 實單必成 可開增值稅13點 |
詢價 |
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