600 V power Schottky silicon carbide diode

Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ri

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600 V power Schottky silicon carbide diode

碳化硅（SiC）二極管是一款超高性能的功率肖特基二極管，是使用碳化硅基板制造的。寬帶隙材料可用于設(shè)計600V額定電壓的肖特基二極管。由于肖特基結(jié)構(gòu)的關(guān)系，關(guān)斷時不存在反向恢復(fù)現(xiàn)象，且振鈴模式幾乎可忽略。最小的容性關(guān)斷行為受溫度影響小。\n ST碳化硅（SiC）二極管能在硬開關(guān)條件下大幅提升PFC操作的性能。 ? 無反向恢復(fù)，或反向恢復(fù)可忽略\n? 開關(guān)行為受溫度影響小? 專為PFC升壓二極管設(shè)計;

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意法半導(dǎo)體

600 V power Schottky silicon carbide diode

Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ri

文件：108.2 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

600 V power Schottky silicon carbide diode

Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ri

文件：108.2 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

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Package：TO-252-3，DPak（2 引線 + 接片），SC-63；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 600V 4A DPAK

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Package：TO-220-2；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 600V 4A TO220AC

STMICROELECTRONICS

意法半導(dǎo)體