isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 27mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：370.81 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：370.47 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N - CHANNEL 100V - 0.020ohm - 50A TO-220 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：86.87 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current : ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 69mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·motor drive,

文件：296.91 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 60 V (D-S) MOSFET

文件：2.1404 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

N-channel 250V - 0.055廓 - 45A - D2PAK - TO-220 low gate charge STripFET??Power MOSFET

文件：342.05 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

雙接頭線纜

Banner

邦納電子

包裝：散裝 類別：電纜組件 模塊化電纜 描述：CABLE MOD 8P8C PLUG TO PL 50.84'

BANNER

邦納電子

N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-220 package

該高壓N溝道MOSFET出自快恢復(fù)體二極管MDmesh DM6系列與之前一代的快恢復(fù)特性MDmesh相比，DM6兼具超低恢復(fù)電荷 (Qrr),恢復(fù)時(shí)間(trr)并且大幅提升單位面積 RDS(on) 值，具有最高效的開關(guān)表現(xiàn)，適用于市面上要求最苛刻的高效橋式拓?fù)浜蚙VS移相轉(zhuǎn)換器。 ? 快恢復(fù)二極管 \n? 單位面積的Rds(on)值比上一代更低 \n? 低柵極電荷、輸入電容和電阻 \n? 經(jīng)過100％雪崩測試 \n? 極高的dv/dt強(qiáng)度 \n? 穩(wěn)壓保護(hù);

ST

意法半導(dǎo)體

N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in a TO-220 package

ST

意法半導(dǎo)體