絲印：P55NF06；Package：TO-220；N-channel 60 V, 0.015 Ω, 50 A STripFET? II Power MOSFET in D2PAK, TO-220 and TO-220FP packages

Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converter

文件：797.49 Kbytes 頁(yè)數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.88 Kbytes 頁(yè)數(shù)：2 Pages

ISC

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N-CHANNEL 30V - 0.01 ohm - 55A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a

文件：338.93 Kbytes 頁(yè)數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a

文件：338.93 Kbytes 頁(yè)數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D?PAK STripFET??II POWER MOSFET

Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters fo

文件：485.18 Kbytes 頁(yè)數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.9 Kbytes 頁(yè)數(shù)：2 Pages

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絲?。?a target="_blank" title="Marking" href="/p55nf06fp/marking.html">P55NF06FP；Package：TO-220；N-channel 60 V, 0.015 Ω, 50 A STripFET? II Power MOSFET in D2PAK, TO-220 and TO-220FP packages

Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converter

文件：797.49 Kbytes 頁(yè)數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D?PAK STripFET??II POWER MOSFET

Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters fo

文件：485.18 Kbytes 頁(yè)數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.82 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.78 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電