N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.022? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATION

文件：201 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 27A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.44 Kbytes 頁數(shù)：2 Pages

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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.022? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATION

文件：201 Kbytes 頁數(shù)：10 Pages

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N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.024? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPERATING TEMPERATURE ■ APPL

文件：199.83 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.14 Kbytes 頁數(shù)：2 Pages

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N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.024? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPERATING TEMPERATURE ■ APPL

文件：199.83 Kbytes 頁數(shù)：10 Pages

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N-channel 650 V, 74 m typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package

Features ? Fast-recovery body diode ? Lower RDS(on) per area vs previous generation ? Low gate charge, input capacitance and resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

文件：248.49 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=80V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.61 Kbytes 頁數(shù)：2 Pages

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N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable

文件：95.4 Kbytes 頁數(shù)：8 Pages

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N-channel 100V - 0.021??- 50A TO-220 STripFET??Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：232.92 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

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