N-channel 650 V, 74 m typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package

Features ? Fast-recovery body diode ? Lower RDS(on) per area vs previous generation ? Low gate charge, input capacitance and resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

文件：248.49 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

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N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-220 package

該高壓N溝道MOSFET出自快恢復(fù)體二極管MDmesh DM6系列與之前一代的快恢復(fù)特性MDmesh相比，DM6兼具超低恢復(fù)電荷 (Qrr),恢復(fù)時間(trr)并且大幅提升單位面積 RDS(on) 值，具有最高效的開關(guān)表現(xiàn)，適用于市面上要求最苛刻的高效橋式拓?fù)浜蚙VS移相轉(zhuǎn)換器。 ? 快恢復(fù)二極管 \n? 單位面積的Rds(on)值比上一代更低 \n? 低柵極電荷、輸入電容和電阻 \n? 經(jīng)過100％雪崩測試 \n? 極高的dv/dt強(qiáng)度 \n? 穩(wěn)壓保護(hù);

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N-channel 650 V, 74 m typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package

Features ? Fast-recovery body diode ? Lower RDS(on) per area vs previous generation ? Low gate charge, input capacitance and resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

文件：250.23 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 650 V, 74 m typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package

Features ? Fast-recovery body diode ? Lower RDS(on) per area vs previous generation ? Low gate charge, input capacitance and resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

文件：248.49 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體