絲?。?a target="_blank" title="Marking" href="/gf10h60df/marking.html">GF10H60DF；Package：TO-220FP；Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.73583 Mbytes 頁(yè)數(shù)：24 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/gf10hf60kd/marking.html">GF10HF60KD；Package：TO-220FP；10 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

文件：477.41 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gf10hf60kd/marking.html">GF10HF60KD；Package：TO-220FP；10 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

文件：477.41 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

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絲印：GF10NC60HD；Package：TO-220FP；600 V - 10 A - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov

文件：771.12 Kbytes 頁(yè)數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gf10nc60kd/marking.html">GF10NC60KD；Package：TO-220FP；10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ? Lowe

文件：1.6576 Mbytes 頁(yè)數(shù)：30 Pages

STMICROELECTRONICS

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N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications wit

文件：379.54 Kbytes 頁(yè)數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ? Lowe

文件：1.6576 Mbytes 頁(yè)數(shù)：30 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gf14hf60kd/marking.html">GF14HF60KD；Package：TO-220FP；14 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

文件：412.31 Kbytes 頁(yè)數(shù)：12 Pages

STMICROELECTRONICS

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絲印：GF15H60DF；Package：TO-220FP；Trench gate field-stop IGBT, H series 600 V, 15 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.86596 Mbytes 頁(yè)數(shù)：23 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.0V@IC= 15A · High Current Capability · High Input Impedance · Low thermal resistance APPLICATIONS · Synchronous Rectification in SMPS · Motor Drives · UPS,PFC · General purpose inverter

文件：398.27 Kbytes 頁(yè)數(shù)：6 Pages

ISC

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