N-channel 600 V, 0.26 廓 typ., 13 A MDmesh??II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

Description These devices are made using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

文件：1.18003 Mbytes 頁數(shù)：21 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.295Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：327.16 Kbytes 頁數(shù)：2 Pages

ISC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.16Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.94 Kbytes 頁數(shù)：2 Pages

ISC

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絲印：19NF20；Package：TO-220FP；N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY? Power MOSFETs in D2PAK, DPAK, TO?220FP and TO-220 packages

Features ? Extremely high dv/dt capability ? Gate charge minimized ? Very low intrinsic capacitance Applications ? Switching applications Description These Power MOSFETs are designed using STMicroelectronics' consolidated striplayout- based MESH OVERLAY? process. The result is a

文件：809.51 Kbytes 頁數(shù)：30 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 200V - 0.15廓 - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY??Power MOSFET

Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources. ■ Extremely high dv/dt capability ■ Gate charge minimized ■

文件：535.64 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 650 V - 0.25 廓 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh? Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

文件：532.84 Kbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.74 Kbytes 頁數(shù)：2 Pages

ISC

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U-Band, Compact Faraday Isolator

FEATURES Full Band Coverage Low Insertion Loss High Isolation Compact Form Factor Backside Flange Screw Access APPLICATIONS Test Lab Instrumentations Subassemblies

文件：399.09 Kbytes 頁數(shù)：2 Pages

ERAVANT

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 1050V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 11Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.26 Kbytes 頁數(shù)：2 Pages

ISC

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Three PhaseNeutral Filters For Solar Technology Applications

Three Phase + Neutral Filters Single stage Solar technoloty applications Compact model for saving space Low leakage current

文件：182.31 Kbytes 頁數(shù)：2 Pages

PREMO

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