| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel MOSFET Transistor ? FEATURES ? Drain Source Voltage- : VDSS= 600V(Min) ? Static drain-source on-resistance : RDS(on) ≤ 2?@VGS=10V ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications 文件：299.74 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH??Power MOSFET Description The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s 文件：620.58 Kbytes 頁數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH??Power MOSFET Description The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s 文件：620.58 Kbytes 頁數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 250V - 0.9ohm - 4A DPAK/IPAK MESH OVERLAY??MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li 文件：273.9 Kbytes 頁數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 250V - 0.9W - 4A DPAK/IPAK MESH OVERLAY MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li 文件：288.48 Kbytes 頁數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 250V - 0.9W - 4A DPAK/IPAK MESH OVERLAY MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li 文件：288.48 Kbytes 頁數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
STD 文件：67.81 Kbytes 頁數(shù)：1 Pages | VCC | VCC | ||
Thyristor-Diode Modules 文件：226.19 Kbytes 頁數(shù)：2 Pages | SIRECTIFIER 矽萊克電子 | SIRECTIFIER | ||
Thyristor-Diode Modules 文件：226.19 Kbytes 頁數(shù)：2 Pages | SIRECTIFIER 矽萊克電子 | SIRECTIFIER | ||
Thyristor-Diode Modules 文件：226.19 Kbytes 頁數(shù)：2 Pages | SIRECTIFIER 矽萊克電子 | SIRECTIFIER |
技術(shù)參數(shù)
- IF(AV)(A)：
40（2×20）
- VRRM(V)：
100
- VF(V)：
0.65
- IR(uA)：
20
- IFSM(A)：
250
- Package：
TO-220
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
T0-220 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
ST |
25+ |
TO-252 |
2890 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
24+ |
N/A |
1530 |
詢價 | ||||
ST |
2016+ |
TO252 |
2500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
ST |
TO-251 |
100 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
ST |
23+ |
SOT252 |
10000 |
原裝正品,假一罰十 |
詢價 | ||
ST |
24+ |
原廠原封 |
6523 |
進口原裝公司百分百現(xiàn)貨可出樣品 |
詢價 | ||
ST |
12+ |
TO-252(DPAK) |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。 |
詢價 | ||
ST |
24+ |
TO-252(2引線+接 |
994 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ST |
16+ |
TO251 |
25 |
全新原裝現(xiàn)貨 |
詢價 |
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