絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

? FEATURES ? Drain Source Voltage- : VDSS= 600V(Min) ? Static drain-source on-resistance : RDS(on) ≤ 2?@VGS=10V ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

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ISC

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絲印：D4NK60Z；Package：DPAK；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH? Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure

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STMICROELECTRONICS

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N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：970.81 Kbytes 頁數(shù)：28 Pages

STMICROELECTRONICS

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Power MOSFET

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VBSEMI

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N溝道600 V、1.7 Ohm典型值、4 A SuperMESH功率MOSFET，DPAK封裝

? 100% avalanche tested \n? Gate charge minimized \n? Very low intrinsic capacitance \n? Zener-protected;

ST

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