| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH??MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a 文件:449.66 Kbytes 頁數(shù):10 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH??MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a 文件:449.66 Kbytes 頁數(shù):10 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印:4NK100Z;Package:DPAK;Automotive-grade N-channel 1000 V, 5.4 Ω typ., 2.2 A SuperMESH Power MOSFET in a DPAK package Features ? AEC-Q101 qualified ? 100 avalanche tested ? Gate charge minimized ? Very low intrinsic capacitance ? Zener-protected Applications ? Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technol 文件:440.2 Kbytes 頁數(shù):15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Automotive-grade N-channel 1000 V, 5.4 Ω typ., 2.2 A SuperMESH Power MOSFET in a DPAK package Features ? AEC-Q101 qualified ? 100 avalanche tested ? Gate charge minimized ? Very low intrinsic capacitance ? Zener-protected Applications ? Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technol 文件:440.2 Kbytes 頁數(shù):15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH??ower MOSFET DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s 文件:664.95 Kbytes 頁數(shù):13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH??ower MOSFET DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s 文件:664.95 Kbytes 頁數(shù):13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 500V - 2.4W - 3A TO-220/TO-220FP/DPAK/IPAK DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s 文件:671.69 Kbytes 頁數(shù):13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH??ower MOSFET DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s 文件:664.95 Kbytes 頁數(shù):13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 500V - 2.4廓 - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH??Power MOSFET Description The fast SuperMESH? series associates all advantages of reduced on-resistance, zener gate protection and outstanding dc/dt capability with a Fast body-drain recovery diode. Such series complements the FDmesh? advanced tecnology. ■ 100 avalanche tested ■ Extremely high dv/dt capabili 文件:893.9 Kbytes 頁數(shù):17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 500V - 2.4廓 - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH??Power MOSFET Description The fast SuperMESH? series associates all advantages of reduced on-resistance, zener gate protection and outstanding dc/dt capability with a Fast body-drain recovery diode. Such series complements the FDmesh? advanced tecnology. ■ 100 avalanche tested ■ Extremely high dv/dt capabili 文件:893.9 Kbytes 頁數(shù):17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- IF(AV)(A):
40(2×20)
- VRRM(V):
100
- VF(V):
0.65
- IR(uA):
20
- IFSM(A):
250
- Package:
TO-220
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
T0-220 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
ST |
25+ |
TO-252 |
2890 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
24+ |
N/A |
1530 |
詢價(jià) | ||||
ST |
2016+ |
TO252 |
2500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
ST |
TO-251 |
100 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) | |||
ST |
23+ |
SOT252 |
10000 |
原裝正品,假一罰十 |
詢價(jià) | ||
ST |
24+ |
原廠原封 |
6523 |
進(jìn)口原裝公司百分百現(xiàn)貨可出樣品 |
詢價(jià) | ||
ST |
12+ |
TO-252(DPAK) |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
ST |
24+ |
TO-252(2引線+接 |
994 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ST |
16+ |
TO251 |
25 |
全新原裝現(xiàn)貨 |
詢價(jià) |
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