N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：235.04 Kbytes 頁數(shù)：8 Pages

SAMHOP

三合微科

P-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Suface Mount Package.

文件：121.96 Kbytes 頁數(shù)：10 Pages

SAMHOP

三合微科

N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ? Super high dense cell design for low RDS(ON). ? Rugged and reliable. ? TO251 and TO252 Package.

文件：889.39 Kbytes 頁數(shù)：8 Pages

SAMHOP

三合微科

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO251 and TO 252 Package.

文件：770.44 Kbytes 頁數(shù)：8 Pages

SAMHOP

三合微科

N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：944.95 Kbytes 頁數(shù)：9 Pages

SAMHOP

三合微科

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：140.37 Kbytes 頁數(shù)：10 Pages

SAMHOP

三合微科

N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

Description These N-channel Power MOSFETs utilize STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features ? Among the lowest RDS(on) on

文件：1.17964 Mbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導體

N - CHANNEL 30V - 0.011 ohm - 45A DPAK STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：47.92 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

意法半導體

N-CHANNEL 75V - 0.018 OHM -40A DPAK STripFETTMII POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：477.04 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導體

N-CHANNEL 75V - 0.018 OHM -40A DPAK STripFETTMII POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：477.04 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導體