N-CHANNEL 30V - 0.018 ohm - 29A DPAK LOW GATE CHARGE STripFET POWER MOSFET

DESCRIPTION This application specific Power MOSFET shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it give the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where f

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N-channel 600V - 4.4廓 - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH??Power MOSFET

Description The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such seri

文件：497.26 Kbytes 頁數(shù)：16 Pages

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N-channel 600V - 4.4廓 - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH??Power MOSFET

Description The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such seri

文件：497.26 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

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N-CHANNEL 600V - 4.4廓 - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET

Description The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such seri

文件：405.77 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1050V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：354.26 Kbytes 頁數(shù)：2 Pages

ISC

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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

1. TYPICAL RDS(on)= 4.5 ? 2. AVALANCHE RUGGED TECHNOLOGY 3. 100 AVALANCHE TESTED

文件：174.41 Kbytes 頁數(shù)：10 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.2A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.35 Kbytes 頁數(shù)：2 Pages

ISC

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N-channel 620 V, 3 ohm, 2.2 A SuperMESH3 Power MOSFET

Description These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rende

文件：1.26101 Mbytes 頁數(shù)：25 Pages

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絲?。?a target="_blank" title="Marking" href="/2n80k5/marking.html">2N80K5；Package：DPAK；N-channel 800 V, 3.5 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.63181 Mbytes 頁數(shù)：23 Pages

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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 3.25 ? ■ ±30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD ■ THROUGH-HOLE IPAK (TO-251) PO

文件：98.03 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

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