isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.2A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無(wú)錫固電

N-channel 620 V, 3 ohm, 2.2 A SuperMESH3 Power MOSFET

Description These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rende

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STMICROELECTRONICS

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Power MOSFET

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VBSEMI

微碧半導(dǎo)體

N溝道620 V、3 Ohm典型值、2.2 A SuperMESH3(TM) 功率MOSFET，DPAK封裝

These MDmesh? K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh? technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable f ? 100% avalanche tested \n? Extremely high dv/dt capability \n? Very low intrinsic capacitance \n? Improved diode reverse recovery characteristics \n? Zener-protected;

ST

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