SCHOTTKY RECTIFIER

Features ? 150'C TJ operation ? Center tap configuration ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ?

文件：441.3 Kbytes 頁數(shù)：7 Pages

SMCDIODE

桑德斯微電子

SCHOTTKY RECTIFIER

Features ? 150 'C TJ operation ? Center tap configuration ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ?

文件：453.49 Kbytes 頁數(shù)：7 Pages

SMCDIODE

桑德斯微電子

SCHOTTKY RECTIFIER

Features ? 150 ?C TJ operation ? Center tap configuration ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ?

文件：448.53 Kbytes 頁數(shù)：7 Pages

SMCDIODE

桑德斯微電子

N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

FEATURES ? Super high dense cell design for low RDS(ON). ? Rugged and reliable. ? TO-252 and TO-251 Package.

文件：801.98 Kbytes 頁數(shù)：8 Pages

SAMHOP

三合微科

N - CHANNEL ENHANCEMENT MODE ??LTRA HIGH DENSITY??POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the latest development in low voltage technology. The ultra high cell density process (UHD) produced with fine geometries on advanced equipment gives the device extremely low RDS(on) as well as good switching performance and high avalanche ene

文件：174.94 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導體

N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General Features ■ TYPICAL RDS(

文件：405.53 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導體

N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General Features ■ TYPICAL RDS(

文件：405.53 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導體

N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable

文件：105 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導體

N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET

DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable ma

文件：96.13 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導體

N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size?” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：416.49 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導體