| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>SPP；Package：SOT-23；TVS Diode Array 文件：1.74737 Mbytes 頁數(shù)：7 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲印：04N80C3；Package：PG-TO220-3；CoolMOSTM Power Transistor Features ? New revolutionary high voltage technology ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Ultra low gate charge ? Ultra low effective capacitances 文件：448.56 Kbytes 頁數(shù)：10 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/07n65c3/marking.html">07N65C3；Package：PG-TO220；Cool MOS Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ● PG-TO-220-3: Fully isolated package (2500 VAC; 1 minute) ? Pb-free lead plating; RoHS compliant ? Quali 文件：396.38 Kbytes 頁數(shù)：15 Pages | INFINEON 英飛凌 | INFINEON | ||
Cool MOS Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances 文件：282.69 Kbytes 頁數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON | ||
N-Channel MOSFET Transistor ? DESCRIPTION ? Ultra low gate charge ? Ultra low effective capacitance ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤3? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：338.47 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N-Channel MOSFET Transistor ? DESCRIPTION ? Ultra low gate charge ? Ultra low effective capacitance ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤3? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance an 文件：337.66 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.09085 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
Cool MOS??Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance 文件：306.41 Kbytes 頁數(shù)：10 Pages | INFINEON 英飛凌 | INFINEON | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Industrial with high DC bulk voltage ·Switching 文件：296.37 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Cool MOS Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) 文件：261.72 Kbytes 頁數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
60000 |
詢價(jià) | ||||
ON |
23+ |
SOT-23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ON |
10+ |
SOT-23 |
3000 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ON |
23+ |
SOT-23 |
3000 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
TI |
25+ |
SOP8 |
10184 |
詢價(jià) | |||
ON |
23+ |
SOT-23 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
ON |
2023+ |
SOT-23 |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢價(jià) | ||
FAIRCHILD |
24+ |
原封裝 |
22093 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
華昕 |
24+ |
SOT-23 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
FSC/ON |
23+ |
原包裝原封□□ |
2669 |
原裝進(jìn)口特價(jià)供應(yīng)特價(jià)，原裝元器件供應(yīng)，支持開發(fā)樣品更多詳細(xì)咨詢庫(kù)存 |
詢價(jià) |
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- SMAJ180
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