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          首頁(yè) >SPP02N80>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          SPP02N80

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Industrial with high DC bulk voltage ·Switching

          文件:296.37 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          SPP02N80C3

          CoolMOSTM Power Transistor

          Features ? New revolutionary high voltage technology ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Ultra low gate charge ? Ultra low effective capacitances CoolMOSTM 800V designed for:

          文件:447.59 Kbytes 頁(yè)數(shù):10 Pages

          INFINEON

          英飛凌

          SPP02N80C3

          Cool MOS Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

          文件:261.72 Kbytes 頁(yè)數(shù):12 Pages

          INFINEON

          英飛凌

          SPP02N80C3

          CoolMOSTM Power Transistor Features New revolutionary high voltage technology

          Features ? New revolutionary high voltage technology ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Ultra low gate charge ? Ultra low effective capacitances CoolMOSTM 800V designed for:

          文件:394.79 Kbytes 頁(yè)數(shù):10 Pages

          INFINEON

          英飛凌

          SPP02N80C3_08

          CoolMOSTM Power Transistor Features New revolutionary high voltage technology

          Features ? New revolutionary high voltage technology ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Ultra low gate charge ? Ultra low effective capacitances CoolMOSTM 800V designed for:

          文件:394.79 Kbytes 頁(yè)數(shù):10 Pages

          INFINEON

          英飛凌

          SPP02N80C3_11

          CoolMOSTM Power Transistor

          Features ? New revolutionary high voltage technology ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Ultra low gate charge ? Ultra low effective capacitances CoolMOSTM 800V designed for:

          文件:447.59 Kbytes 頁(yè)數(shù):10 Pages

          INFINEON

          英飛凌

          SPP02N80C3

          500V-900V CoolMOS? N-Channel Power MOSFET

          CoolMOS? P7替代CoolMOS? C3 。\n 800V CoolMOS? C3 是英飛凌第三個(gè) CoolMOS? 系列產(chǎn)品,于 2001 年上市。C3 是產(chǎn)品組合中的主力軍。 特定導(dǎo)通電阻低(R DS(on)* A)\n ? 輸出電容為(E oss)@ 400V 時(shí),能量?jī)?chǔ)存非常低\n? 低柵極電荷(Qg)\n? 經(jīng)過(guò)實(shí)踐認(rèn)證的 CoolMOS? 質(zhì)量\n? 自1998年以來(lái),英飛凌就開(kāi)始大規(guī)模開(kāi)發(fā)CoolMOS? 技術(shù)\n\n優(yōu)勢(shì):\n? 高效率,高功率密度\n? 超高成本/性能比\n? 高可靠性\n? 使用方便\n?;

          Infineon

          英飛凌

          技術(shù)參數(shù)

          • Package?:

            TO-220

          • VDS?max:

            800.0V

          • RDS (on)?max:

            2700.0m?

          • Polarity?:

            N

          • ID ?max:

            2.0A

          • Ptot?max:

            42.0W

          • IDpuls?max:

            6.0A

          • VGS(th)?min?max:

            2.1V?3.9V

          • QG?:

            9.0nC?

          • Rth?:

            3.0K/W?

          • RthJC?max:

            3.0K/W

          • RthJA?max:

            62.0K/W

          • Operating Temperature?min:

            -55.0°C?

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          Infineo
          25+
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          70
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          20000
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          85600
          保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
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          更多SPP02N80供應(yīng)商 更新時(shí)間2026-1-20 15:59:00
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