Cool MOS Power Transistor

Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances

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INFINEON

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N-Channel MOSFET Transistor

? DESCRIPTION ? Ultra low gate charge ? Ultra low effective capacitance ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤3? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

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Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：462.48 Kbytes 頁數(shù)：12 Pages

INFINEON

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COOL MOS POWER TRANSISTOR

文件：462.48 Kbytes 頁數(shù)：12 Pages

INFINEON

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500V-900V CoolMOS? N-Channel Power MOSFET

Replacement for 600V CoolMOS? C3 is CoolMOS? P7\n 600V CoolMOS? C3 is Infineon's third series of CoolMOS? with market entry in 2001. C3 is the \"working horse\" of the portfolio. ? Low specific on-state resistance (RDS(on)*A)\n? Very low energy storage in output capacitance (Eoss) @400V\n? Low gate charge (Qg)\n? Fieldproven CoolMOS? quality\n? CoolMOS? technology has been manufactured by Infineon since 1998\n\n優(yōu)勢:\n? High efficiency and power density\n? Outstanding cost/per;

Infineon

英飛凌

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：462.48 Kbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

COOL MOS POWER TRANSISTOR

文件：462.48 Kbytes 頁數(shù)：12 Pages

INFINEON

英飛凌