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          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MMBZ50VD

          絲?。?strong>SPP;Package:SOT-23;TVS Diode Array

          文件:1.74737 Mbytes 頁數(shù):7 Pages

          LEIDITECH

          雷卯電子

          SPP04N80C3

          絲?。?a target="_blank" title="Marking" href="/04n80c3/marking.html">04N80C3;Package:PG-TO220-3;CoolMOSTM Power Transistor

          Features ? New revolutionary high voltage technology ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Ultra low gate charge ? Ultra low effective capacitances

          文件:448.56 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          SPP07N65C3

          絲印:07N65C3;Package:PG-TO220;Cool MOS Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ● PG-TO-220-3: Fully isolated package (2500 VAC; 1 minute) ? Pb-free lead plating; RoHS compliant ? Quali

          文件:396.38 Kbytes 頁數(shù):15 Pages

          INFINEON

          英飛凌

          SPP02N60C3

          Cool MOS Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances

          文件:282.69 Kbytes 頁數(shù):12 Pages

          INFINEON

          英飛凌

          SPP02N60C3

          N-Channel MOSFET Transistor

          ? DESCRIPTION ? Ultra low gate charge ? Ultra low effective capacitance ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤3? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:338.47 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          SPP02N60S5

          N-Channel MOSFET Transistor

          ? DESCRIPTION ? Ultra low gate charge ? Ultra low effective capacitance ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤3? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance an

          文件:337.66 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          SPP02N60S5

          N-Channel 650 V (D-S) MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

          文件:1.09085 Mbytes 頁數(shù):9 Pages

          VBSEMI

          微碧半導體

          SPP02N60S5

          Cool MOS??Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance

          文件:306.41 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          SPP02N80

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Industrial with high DC bulk voltage ·Switching

          文件:296.37 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          SPP02N80C3

          Cool MOS Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

          文件:261.72 Kbytes 頁數(shù):12 Pages

          INFINEON

          英飛凌

          供應商型號品牌批號封裝庫存備注價格
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          更多SPP供應商 更新時間2026-1-18 15:30:00
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