| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power Bead Inductors Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free 文件:714.15 Kbytes 頁數(shù):4 Pages | BOURNS 伯恩斯 | BOURNS | ||
Power Bead Inductors Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free 文件:714.15 Kbytes 頁數(shù):4 Pages | BOURNS 伯恩斯 | BOURNS | ||
Power Bead Inductors Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free 文件:714.15 Kbytes 頁數(shù):4 Pages | BOURNS 伯恩斯 | BOURNS | ||
Power Bead Inductors Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free 文件:714.15 Kbytes 頁數(shù):4 Pages | BOURNS 伯恩斯 | BOURNS | ||
絲?。?a target="_blank" title="Marking" href="/11n60c2/marking.html">11N60C2;Package:P-TO263-3-2;Cool MOS??Power Transistor Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances 文件:160.17 Kbytes 頁數(shù):14 Pages | INFINEON 英飛凌 | INFINEON | ||
Cool MOS??Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) 文件:352.75 Kbytes 頁數(shù):14 Pages | INFINEON 英飛凌 | INFINEON | ||
Cool MOS Power Transistor Feature ? New revolutionary high voltage technology ? Worldwide best RDS(on) in TO 220 ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? 150 °C operating temperature 文件:193.21 Kbytes 頁數(shù):14 Pages | INFINEON 英飛凌 | INFINEON | ||
絲印:D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor ? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications 文件:189.57 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
N-Channel 650 V (D-S) MOSFET FEATURES ? Reduced trr, Qrr, and IRRM ? Low figure-of-merit (FOM) Ron x Qg ? Low input capacitance (Ciss) ? Low switching losses due to reduced Qrr ? Ultra low gate charge (Qg) ? Avalanche energy rated (UIS) APPLICATIONS ? Telecommunications - Server and telecom power supplies ? Light 文件:1.04045 Mbytes 頁數(shù):8 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
Cool MOS??Power Transistor Cool MOS? Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance 文件:335.41 Kbytes 頁數(shù):12 Pages | INFINEON 英飛凌 | INFINEON |
技術(shù)參數(shù)
- Io [A]:
10.00
- trr [nsec]:
N/A
- Ifsm [A]:
150
- Vf typ [V]:
N/A
- Vf max [V]:
0.90
- Ir typ [μA]:
N/A
- Ir max [μA]:
50.00
- BVr min [V]:
100.00
- Package:
BDA
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
24+ |
TO-263 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單! |
詢價(jià) | ||
I |
24+ |
P-TO263-3-2 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
Infineon |
1645+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
INFINEON |
2016+ |
TO-263 |
6000 |
公司只做原裝,假一罰十,可開17%增值稅發(fā)票! |
詢價(jià) | ||
infineon |
18+ |
TO-263 |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
INFINEON |
24+ |
SOP8 |
890 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
SANKEN |
2019+PB |
D-Pack |
25000 |
全新-特價(jià)大量供貨房間 |
詢價(jià) | ||
Infineon(英飛凌) |
2447 |
PG-TO263-3 |
315000 |
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
INFINEON |
25+ |
TO-263/D2 |
32500 |
普通 |
詢價(jià) | ||
INFINEON |
23+ |
P-TO263-3-2 |
3000 |
原裝正品假一罰百!可開增票! |
詢價(jià) |
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