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          首頁(yè) >SPB>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          SPB04N50C3

          Cool MOS Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

          文件:292.69 Kbytes 頁(yè)數(shù):13 Pages

          INFINEON

          英飛凌

          SPB04N60C2

          Cool MOS??Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances

          文件:164.27 Kbytes 頁(yè)數(shù):14 Pages

          INFINEON

          英飛凌

          SPB04N60C2

          N-Channel 650V (D-S) Power MOSFET

          FEATURES ? Low figure-of-merit (FOM) Ron x Qg ? Low input capacitance (Ciss) ? Reduced switching and conduction losses ? Ultra low gate charge (Qg) ? Avalanche energy rated (UIS) APPLICATIONS ? Server and telecom power supplies ? Switch mode power supplies (SMPS) ? Power factor correction

          文件:1.10931 Mbytes 頁(yè)數(shù):10 Pages

          VBSEMI

          微碧半導(dǎo)體

          SPB04N60C3

          絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor

          ? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

          文件:189.57 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          SPB04N60C3

          Cool MOS Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

          文件:304.59 Kbytes 頁(yè)數(shù):14 Pages

          INFINEON

          英飛凌

          SPB04N60C3

          N-Channel 650V (D-S) Power MOSFET

          FEATURES ? Low figure-of-merit (FOM) Ron x Qg ? Low input capacitance (Ciss) ? Reduced switching and conduction losses ? Ultra low gate charge (Qg) ? Avalanche energy rated (UIS) APPLICATIONS ? Server and telecom power supplies ? Switch mode power supplies (SMPS) ? Power factor correction

          文件:1.10925 Mbytes 頁(yè)數(shù):10 Pages

          VBSEMI

          微碧半導(dǎo)體

          SPB04N60S5

          Cool MOS??Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance

          文件:323.85 Kbytes 頁(yè)數(shù):11 Pages

          INFINEON

          英飛凌

          SPB04N60S5

          Cool MOS??Power Transistor Feature New revolutionary high voltage technology

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? Qualified according to JEDEC0) for target applications

          文件:366.01 Kbytes 頁(yè)數(shù):11 Pages

          INFINEON

          英飛凌

          SPB04N60S5

          絲印:D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor

          ? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

          文件:189.29 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          SPB04N60S5

          N-Channel 650V (D-S) Power MOSFET

          FEATURES ? Low figure-of-merit (FOM) Ron x Qg ? Low input capacitance (Ciss) ? Reduced switching and conduction losses ? Ultra low gate charge (Qg) ? Avalanche energy rated (UIS) APPLICATIONS ? Server and telecom power supplies ? Switch mode power supplies (SMPS) ? Power factor correction

          文件:1.11012 Mbytes 頁(yè)數(shù):10 Pages

          VBSEMI

          微碧半導(dǎo)體

          技術(shù)參數(shù)

          • Io [A]:

            10.00

          • trr [nsec]:

            N/A

          • Ifsm [A]:

            150

          • Vf typ [V]:

            N/A

          • Vf max [V]:

            0.90

          • Ir typ [μA]:

            N/A

          • Ir max [μA]:

            50.00

          • BVr min [V]:

            100.00

          • Package:

            BDA

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          I
          24+
          P-TO263-3-2
          5000
          只做原裝公司現(xiàn)貨
          詢價(jià)
          INFINEON/英飛凌
          24+
          TO-263
          9600
          原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
          詢價(jià)
          Infineon(英飛凌)
          2447
          PG-TO263-3
          315000
          一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
          詢價(jià)
          SANKEN
          2019+PB
          D-Pack
          25000
          全新-特價(jià)大量供貨房間
          詢價(jià)
          三年內(nèi)
          1983
          只做原裝正品
          詢價(jià)
          ST(意法半導(dǎo)體)
          2021+
          Module
          499
          詢價(jià)
          INFINEON
          TO263-3-2
          22+
          10000
          終端免費(fèi)提供樣品 可開(kāi)13%增值稅發(fā)票
          詢價(jià)
          Infineon
          1645+
          ?
          7500
          只做原裝進(jìn)口,假一罰十
          詢價(jià)
          20+
          790
          全新現(xiàn)貨熱賣中歡迎查詢
          詢價(jià)
          INFINEON
          2016+
          TO-263
          6000
          公司只做原裝,假一罰十,可開(kāi)17%增值稅發(fā)票!
          詢價(jià)
          更多SPB供應(yīng)商 更新時(shí)間2026-1-20 10:20:00
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