| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SPB | ADSL MODEM??AX??ELEPHONE 文件:728.79 Kbytes 頁數(shù):4 Pages | SPSEMI 瞬雷電子 | SPSEMI | |
SPB | Miniature pushbutton switches, optional LED, IP67, SMD 文件:483.46 Kbytes 頁數(shù):4 Pages | APEX-ELECTRONICS | APEX-ELECTRONICS | |
絲?。?strong>SPB;Package:UDFN6B;MOSFETs Silicon P-Channel MOS 1. Applications ? Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (typ.) (@VGS = -4.5 V) 文件:441.39 Kbytes 頁數(shù):9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
10 AMP 20 VOLTS BYPASS DIODE ASSEMBLY FEATURES: ? Designed for Space Use on Flexible Solar Pannels ? Hermetically Sealed. ? Wide Temperature Range: -100 to +150oC ? Qualified Design to 20,000 Temperature Cycles ? Flexible Leads - Welded or Soldered Termination ? Large Radiation Surface for Operation without Heatsink 文件:49.07 Kbytes 頁數(shù):2 Pages | SSDI | SSDI | ||
Cool MOS Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances 文件:282.69 Kbytes 頁數(shù):12 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor ? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications 文件:189.48 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
Cool MOS Power Transistor Features ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Qualified according to JEDEC0) for target applications 文件:551.02 Kbytes 頁數(shù):12 Pages | INFINEON 英飛凌 | INFINEON | ||
N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件:2.03131 Mbytes 頁數(shù):9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
Cool MOS Power Transistor Features ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Qualified according to JEDEC0) for target applications 文件:551.02 Kbytes 頁數(shù):12 Pages | INFINEON 英飛凌 | INFINEON | ||
Cool MOS??Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance 文件:306.41 Kbytes 頁數(shù):10 Pages | INFINEON 英飛凌 | INFINEON |
技術(shù)參數(shù)
- Io [A]:
10.00
- trr [nsec]:
N/A
- Ifsm [A]:
150
- Vf typ [V]:
N/A
- Vf max [V]:
0.90
- Ir typ [μA]:
N/A
- Ir max [μA]:
50.00
- BVr min [V]:
100.00
- Package:
BDA
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
I |
24+ |
P-TO263-3-2 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
Infineon |
1645+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
INFINEON/英飛凌 |
24+ |
TO-263 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單! |
詢價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
Infineon(英飛凌) |
2447 |
PG-TO263-3 |
315000 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
INFINEON |
23+ |
P-TO263-3-2 |
3000 |
原裝正品假一罰百!可開增票! |
詢價(jià) | ||
INFINEON |
24+ |
SOP8 |
890 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
SANKEN |
2019+PB |
D-Pack |
25000 |
全新-特價(jià)大量供貨房間 |
詢價(jià) | ||
20+ |
790 |
全新現(xiàn)貨熱賣中歡迎查詢 |
詢價(jià) | ||||
ST(意法半導(dǎo)體) |
2021+ |
Module |
499 |
詢價(jià) |
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