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          首頁 >SPB>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          SPB02N60S5

          Cool MOS??Power Transistor Feature New revolutionary high voltage technology

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? Qualified according to JEDEC0) for target applications

          文件:349.26 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          SPB02N60S5

          絲印:D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor

          ? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

          文件:188.85 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          SPB02N60S5

          N-Channel 650 V (D-S) MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

          文件:1.10342 Mbytes 頁數(shù):9 Pages

          VBSEMI

          微碧半導體

          SPB02N60S5_07

          Cool MOS??Power Transistor Feature New revolutionary high voltage technology

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? Qualified according to JEDEC0) for target applications

          文件:349.26 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          SPB03N60C3

          Cool MOS Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

          文件:308.23 Kbytes 頁數(shù):14 Pages

          INFINEON

          英飛凌

          SPB03N60C3

          N-Channel 650V (D-S) Power MOSFET

          FEATURES ? Low figure-of-merit (FOM) Ron x Qg ? Low input capacitance (Ciss) ? Reduced switching and conduction losses ? Ultra low gate charge (Qg) ? Avalanche energy rated (UIS) APPLICATIONS ? Server and telecom power supplies ? Switch mode power supplies (SMPS) ? Power factor correction

          文件:2.19253 Mbytes 頁數(shù):10 Pages

          VBSEMI

          微碧半導體

          SPB03N60C3

          絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor

          ? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

          文件:189.48 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          SPB03N60S5

          N-Channel 650 V (D-S) MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

          文件:1.10328 Mbytes 頁數(shù):9 Pages

          VBSEMI

          微碧半導體

          SPB03N60S5

          Cool MOS??Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance

          文件:308.41 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          SPB03N60S5

          High Power Factor LED Replacement T8 Fluorescent Tube

          Introduction This application note describes the principles and design equations required for the design of a high brightness LED lamp using the AL9910. The equations are then used to demonstrate the design of a universal, offline, high power factor (PF), 13W LED lamp suitable for use as the re

          文件:552.73 Kbytes 頁數(shù):12 Pages

          DIODES

          美臺半導體

          技術參數(shù)

          • Io [A]:

            10.00

          • trr [nsec]:

            N/A

          • Ifsm [A]:

            150

          • Vf typ [V]:

            N/A

          • Vf max [V]:

            0.90

          • Ir typ [μA]:

            N/A

          • Ir max [μA]:

            50.00

          • BVr min [V]:

            100.00

          • Package:

            BDA

          供應商型號品牌批號封裝庫存備注價格
          INFINEON/英飛凌
          24+
          TO-263
          9600
          原裝現(xiàn)貨,優(yōu)勢供應,支持實單!
          詢價
          三年內(nèi)
          1983
          只做原裝正品
          詢價
          I
          24+
          P-TO263-3-2
          5000
          只做原裝公司現(xiàn)貨
          詢價
          INFINEON
          2016+
          TO-263
          6000
          公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
          詢價
          Infineon
          1645+
          ?
          7500
          只做原裝進口,假一罰十
          詢價
          20+
          790
          全新現(xiàn)貨熱賣中歡迎查詢
          詢價
          SANKEN
          2019+PB
          D-Pack
          25000
          全新-特價大量供貨房間
          詢價
          Infineon(英飛凌)
          2447
          PG-TO263-3
          315000
          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價
          INFINEON
          25+
          206
          公司優(yōu)勢庫存 熱賣中!
          詢價
          INFINEON
          23+
          P-TO263-3-2
          3000
          原裝正品假一罰百!可開增票!
          詢價
          更多SPB供應商 更新時間2026-1-20 11:16:00
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