N-Channel 2.5-V (G-S) MOSFET

文件：61.52 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 2.5-V (G-S) MOSFET

文件：185.46 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 20 V (D-S) MOSFET

文件：219.91 Kbytes 頁數(shù)：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description\nThese N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low vo ■ 4.1 A, 20 V.?\n?? RDS(ON) = 0.06 W @ VGS = 4.5 V\n?? RDS(ON) = 0.075 W @ VGS =2.7 V.\n■ Proprietary SuperSOTTM-6 package design using copper\n?? lead frame for superior thermal and electrical capabilities.\n■ High density cell design for extremely low RDS(ON).\n■ Exceptional on-resistance and maxi;

ONSEMI

安森美半導(dǎo)體

N-Channel 20 V (D-S) MOSFET

Vishay

威世