Single P-Channel Logic Level PowerTrench MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. Features ? –4 A, –30 V. RDS(ON) = 50 m? @ VGS = –10 V RDS(ON) = 75 m? @ VGS = –4.5 V ? Low

文件：85.23 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導體

P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Available ? TrenchFET? Power MOSFET APPLICATIONS ? Load Switch

文件：450.8 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Available ? TrenchFET? Power MOSFET APPLICATIONS ? Load Switch

文件：451.22 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

雙P溝道邏輯電平PowerTrench? MOSFET

此P溝道邏輯電平MOSFET采用飛兆高級PowerTrench工藝生產(chǎn)。 它已針對電池的電源管理應(yīng)用進行了優(yōu)化。 ?-4 A，-30 V。\n?RDS(ON) = 50 mΩ @ VGS = -10 V\n?RDS(ON) = 75 mΩ @ VGS = -4.5 V\n?低柵極變化\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON);

ONSEMI

安森美半導體

30-V (D-S) Single

Vishay

威世