P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Features ? –5.5 A, –20 V. RDS(ON) = 33 m? @ VGS = –4.5 V RDS(ON) = 43 m? @ VGS = –2.5 V

文件：90.72 Kbytes 頁(yè)數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 1.8V (G-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the

文件：246.26 Kbytes 頁(yè)數(shù)：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Available ? TrenchFET? Power MOSFET APPLICATIONS ? Load Switch

文件：439.39 Kbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

P-Channel 1.8-V (G-S) MOSFET

Vishay

威世