N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low

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FAIRCHILD

仙童半導體

N-Channel 30 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? Low On-Resistance ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? DC/DC Converters, High Speed Switching

文件：476.16 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

N-Channel 30 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? Low On-Resistance ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? DC/DC Converters, High Speed Switching

文件：476.27 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description\nThese N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low vo ■ 4.1 A, 20 V.?\n?? RDS(ON) = 0.06 W @ VGS = 4.5 V\n?? RDS(ON) = 0.075 W @ VGS =2.7 V.\n■ Proprietary SuperSOTTM-6 package design using copper\n?? lead frame for superior thermal and electrical capabilities.\n■ High density cell design for extremely low RDS(ON).\n■ Exceptional on-resistance and maxi;

ONSEMI

安森美半導體

20-V (D-S) Single

Vishay

威世