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          首頁 >RM1>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          RM100N60AT2

          絲?。?a target="_blank" title="Marking" href="/100n60/marking.html">100N60;Package:TO-220-3L;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N60AT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

          文件:346 Kbytes 頁數(shù):7 Pages

          RECTRON

          麗正國際

          RM100N60BT2

          絲?。?a target="_blank" title="Marking" href="/100n60/marking.html">100N60;Package:TO-220-3L;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N60BT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

          文件:1.44149 Mbytes 頁數(shù):6 Pages

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          麗正國際

          RM100N60DF

          絲印:AN60;Package:DFN5X6-8L;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N60DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON)

          文件:158.88 Kbytes 頁數(shù):6 Pages

          RECTRON

          麗正國際

          RM100N60DFV

          絲?。?a target="_blank" title="Marking" href="/an60/marking.html">AN60;Package:DFN5X6-8L;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N60DFV uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON)

          文件:224.17 Kbytes 頁數(shù):6 Pages

          RECTRON

          麗正國際

          RM100N60HD

          絲?。?a target="_blank" title="Marking" href="/100n60/marking.html">100N60;Package:TO-263;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N60HD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

          文件:493.23 Kbytes 頁數(shù):7 Pages

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          RM100N60LD

          絲印:100N06;Package:TO-252-2L;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N60LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =65V,ID =100A RDS(ON)

          文件:384.16 Kbytes 頁數(shù):7 Pages

          RECTRON

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          RM100N60T7

          絲印:100N60;Package:TO-247;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N60T7 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

          文件:474.17 Kbytes 頁數(shù):7 Pages

          RECTRON

          麗正國際

          RM100N65DF

          絲?。?a target="_blank" title="Marking" href="/an65/marking.html">AN65;Package:DFN5X6-8L;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N65DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =65V,ID =100A RDS(ON)

          文件:278.89 Kbytes 頁數(shù):7 Pages

          RECTRON

          麗正國際

          RM100SZ-6R

          MEDIUM POWER GENERAL USE NON-INSULATED TYPE

          MEDIUM POWER GENERAL USE NON-INSULATED TYPE ? IF(AV) Average forward current .......... 100A ? VRRM Repetitive peak reverse voltage ....................... 300V ? TRIPLE ARMS ? Non-Insulated Type APPLICATION Welders

          文件:43.02 Kbytes 頁數(shù):3 Pages

          MITSUBISHI

          三菱電機

          RM100SZ-6S

          MEDIUM POWER GENERAL USE NON-INSULATED TYPE

          MEDIUM POWER GENERAL USE NON-INSULATED TYPE ? IF(AV) Average forward current .......... 100A ? VRRM Repetitive peak reverse voltage ....................... 300V ? TRIPLE ARMS ? Non-Insulated Type APPLICATION Welders

          文件:43.02 Kbytes 頁數(shù):3 Pages

          MITSUBISHI

          三菱電機

          技術(shù)參數(shù)

          • Lef [mm] *:

            44.6

          • Aef [mm2] *:

            96.6

          • Vef [mm3] *:

            4310

          • AL [nH/turns2]:

            4500±25%

          • Gap [μm]:

            ungapped

          • μe:

            ≈1650

          • ROHS:

            v

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